Find Japanese Patents for Lighting Diode
This is an example about how to search for Japan patent about diode structure and method of manufacturing the same.
Table. Search strings and number of the hits
A light-emitting device comprising: a GaN layer with multilayer structure having an n-type layer, an active layer, and a p-type layer; a conductive layer deposited on a first surface of the GaN layer, the conductive layer having a first electrode that is contact with the first surface of the GaN layer; and a second electrode that is in contact with a second surface of the GaN layer.
Search strings and number of hits are provided below for reference.
In the search using Japanese key word string synonyms corresponding to (“light emitting device”, “light emitting element”, “diode”, “LED”) and (“Gallium nitride”, “nitride compound”, “GaN”), and combination of IPC and key word strings, a total of 1425 hits were generated.
After screening and reviewing the 1425 hits, 7 patent documents are uncovered as relevant art for further review. In additional to the 7 documents, 15 other patents disclosing diodes with vertical diode structures were also identified and provided as reference materials.
| Search No. || Explanation || Number of hits*|
|S9 || S8+S3 || 1425|
|S8 || S7*S5 || 243|
|S7 || Using Japanese key word synonyms corresponding to “reflect/reflecting” || 170686|
|S6 || S4*S2 || 14263|
|S5 || S4*S1 || 4594|
|S4 || IPC search || 388046|
|S3 || S1*S2 || 1307|
|S2 || Using key word synonyms corresponding to “light emitting device”, “light emitting element”, “diode”, “LED” || 89689|
|S1 || Using key word synonyms corresponding to “Gallium nitride”, “nitride compound”, “GaN” || 15615|
NRI, Patolis and IPDL